Catalog
Nch 80V 235A, TO-263AB, Power MOSFET
Description
AI
RJ1N10BBH is a power MOSFET with low on-resistance and high power package, suitable for switching, motor drives, and DC/DC converter.
Beta
⌘K
Nch 80V 235A, TO-263AB, Power MOSFET
Nch 80V 235A, TO-263AB, Power MOSFET
| Part | Rds On (Max) @ Id, Vgs | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Technology | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 2 mOhm | TO-263AB | 11800 pF | N-Channel | Surface Mount | 80 V | 6 V 10 V | 189 W | 20 V | 185 nC | 105 A | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 150 °C |