IRFR9310 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 400V 1.8A DPAK
| Part | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Vgs(th) (Max) @ Id | Package / Case | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Technology | Vgs (Max) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 50 W | 1.8 A | 270 pF | 13 nC | P-Channel | 4 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | DPAK | -55 °C | 150 °C | Surface Mount | 10 V | 7 Ohm | MOSFET (Metal Oxide) | 20 V | 400 V |
Vishay General Semiconductor - Diodes Division | 50 W | 1.8 A | 270 pF | 13 nC | P-Channel | 4 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | DPAK | -55 °C | 150 °C | Surface Mount | 10 V | 7 Ohm | MOSFET (Metal Oxide) | 20 V | 400 V |
Vishay General Semiconductor - Diodes Division | 50 W | 1.8 A | 270 pF | 13 nC | P-Channel | 4 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | DPAK | -55 °C | 150 °C | Surface Mount | 10 V | 7 Ohm | MOSFET (Metal Oxide) | 20 V | 400 V |
Vishay General Semiconductor - Diodes Division | 50 W | 1.8 A | 270 pF | 13 nC | P-Channel | 4 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | DPAK | -55 °C | 150 °C | Surface Mount | 10 V | 7 Ohm | MOSFET (Metal Oxide) | 20 V | 400 V |
Vishay General Semiconductor - Diodes Division | 50 W | 1.8 A | 270 pF | 13 nC | P-Channel | 4 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252AA | -55 °C | 150 °C | Surface Mount | 10 V | 7 Ohm | MOSFET (Metal Oxide) | 20 V | 400 V |