NTHL120N60S5Z Series

Power MOSFET, N-Channel, SUPERFET® V, Easy Drive, 600 V, 28 A, 120 mΩ, TO-247

Catalog

Power MOSFET, N-Channel, SUPERFET® V, Easy Drive, 600 V, 28 A, 120 mΩ, TO-247

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
ON Semiconductor NTHL120N60S5Z	20 V	2088 pF	TO-247-3	10 V	28 A	40 nC	-55 °C	150 °C	TO-247-3	MOSFET (Metal Oxide)	N-Channel	Through Hole	600 V	4 V

Catalog

Power MOSFET, N-Channel, SUPERFET® V, Easy Drive, 600 V, 28 A, 120 mΩ, TO-247

Key Features

• Ultra Low Gate Charge (Typ. Qg= 39 nC)

• Low Time Related Output Capacitance (Typ. Coss(tr.)= 547 pF)

• Optimized Capacitance

• 650 V @ TJ = 150°C

• Typ. RDS(on) = 96 m Ω

• 100% Avalanche Tested

• RoHS Compliant

• Internal Gate Resistance: 3.5 Ω

Description

The SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns and high body diode dVDS/dt ratings at 50 V/ns. Consequently, the SUPERFET V MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use for both hard and soft switching topologies. It helps manage EMI issues and allows for easier design implementation with excellent system efficiency