VBT2080 Series

Catalog

DIODE SCHOTTKY 80V 20A TO263AB

Part	Current - Reverse Leakage @ Vr	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Average Rectified (Io) (per Diode)	Diode Configuration
Vishay General Semiconductor - Diodes Division VBT2080S-E3/4W	700 µA	Schottky	150 °C	-55 °C	Surface Mount	80 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AB (D2PAK)	920 mV	200 mA 500 ns
Vishay General Semiconductor - Diodes Division VBT2080S-E3/8W	700 µA	Schottky	150 °C	-55 °C	Surface Mount	80 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AB (D2PAK)	920 mV	200 mA 500 ns
Vishay General Semiconductor - Diodes Division VBT2080S-M3/8W	700 µA	Schottky	150 °C	-55 °C	Surface Mount	80 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AB (D2PAK)	920 mV	200 mA 500 ns
Vishay General Semiconductor - Diodes Division VBT2080S-M3/4W	700 µA	Schottky	150 °C	-55 °C	Surface Mount	80 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AB (D2PAK)	920 mV	200 mA 500 ns
Vishay General Semiconductor - Diodes Division VBT2080C-M3/8W	600 µA	Schottky	150 °C	-55 °C	Surface Mount	80 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AB (D2PAK)	810 mV	200 mA 500 ns	10 A	1 Pair Common Cathode