GD9FS1G8 Series
Manufacturer: GigaDevice Semiconductor (HK) Limited
IC FLASH 1GBIT PAR 63FBGA
| Part | Supplier Device Package | Memory Interface | Memory Format | Memory Type | Mounting Type | Memory Organization | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Memory Size | Voltage - Supply [Max] | Voltage - Supply [Min] | Package / Case | Access Time | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | 63-FBGA (9x11) | Parallel | FLASH | Non-Volatile | Surface Mount | 128 M | 45 ns | 45 ns | FLASH - NAND (SLC) | 85 C | -40 ¯C | 1 Mbit | 1.95 V | 1.7 V | 63-VFBGA | 30 ns | ||
GigaDevice Semiconductor (HK) Limited | 48-TSOP I | ONFI | FLASH | Non-Volatile | Surface Mount | 128 M | 20 ns | 600 µs | FLASH - NAND (SLC) | 85 C | -40 ¯C | 1 Mbit | 1.95 V | 1.7 V | 48-TFSOP | 16 ns | 18.4 mm | 0.724 in |
GigaDevice Semiconductor (HK) Limited | 63-FBGA (9x11) | ONFI | FLASH | Non-Volatile | Surface Mount | 128 M | 20 ns | 600 µs | FLASH - NAND (SLC) | 85 C | -40 ¯C | 1 Mbit | 3.6 V | 2.7 V | 63-VFBGA | 16 ns | ||
GigaDevice Semiconductor (HK) Limited | ||||||||||||||||||
GigaDevice Semiconductor (HK) Limited | 48-TSOP I | FLASH | Non-Volatile | Surface Mount | 128 M | FLASH - NAND | 1 Mbit | 1.95 V | 1.7 V | 48-TFSOP (0.173" 4.40mm Width) | ||||||||
GigaDevice Semiconductor (HK) Limited |