FFSB0465A Series

Silicon Carbide (SiC) Schottky Diode, 650 V, 4 A, D2PAK

Catalog

Silicon Carbide (SiC) Schottky Diode, 650 V, 4 A, D2PAK

Part	Technology	Speed	Capacitance @ Vr, F	Mounting Type	Package / Case	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]
ON Semiconductor FFSB0465A	SiC (Silicon Carbide) Schottky	No Recovery Time	258 pF	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	0 ns	1.75 V	7.7 A	200 µA	TO-263 (D2PAK)	175 ░C	-55 C	650 V

Catalog

Silicon Carbide (SiC) Schottky Diode, 650 V, 4 A, D2PAK

Key Features

• Max Junction Temperature 175 °C

• High Surge Current Capacity

• Positive Temperature Coefficient

• No Reverse Recovery / No Forward Recovery

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Llew