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P-Channel Enhancement Mode Vertical DMOS FET
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P-Channel Enhancement Mode Vertical DMOS FET
P-Channel Enhancement Mode Vertical DMOS FET
| Part | Drain to Source Voltage (Vdss) | Package / Case | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Technology | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | 60 V | TO-261-4 TO-261AA | 3.5 V | 450 mA | MOSFET (Metal Oxide) | SOT-223-3 | 100 pF | 2 W | 5 Ohm | Surface Mount | -55 °C | 150 °C | 20 V | 10 V | P-Channel | |
 Diodes Inc | 60 V | TO-226-3 TO-92-3 | 3.5 V | 280 mA | MOSFET (Metal Oxide) | TO-92 | 100 pF | 5 Ohm | Through Hole | -55 °C | 150 °C | 20 V | 10 V | P-Channel | 700 mW | |
 Diodes Inc | 60 V | E-Line-3 | 3.5 V | 280 mA | MOSFET (Metal Oxide) | E-Line (TO-92 compatible) | 100 pF | 5 Ohm | Through Hole | -55 °C | 150 °C | 20 V | 10 V | P-Channel | 700 mW |