SIHW61 Series

Catalog

MOSFET N-CH 650V 64A TO247AD

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type
Vishay General Semiconductor - Diodes Division SIHW61N65EF-GE3	30 V	47 mOhm	10 V	7407 pF	64 A	4 V	-55 °C	150 °C	MOSFET (Metal Oxide)	TO-247AD	520 W	371 nC	N-Channel	650 V	TO-247-3	Through Hole