NVTFS4C02N Series

MOSFET - Single N-Channel Power, N-Channel, µ8FL, 30V, 162 A, 2.25 mΩ

Catalog

MOSFET - Single N-Channel Power, N-Channel, µ8FL, 30V, 162 A, 2.25 mΩ

Part	Grade	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs(th) (Max) @ Id [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
ON Semiconductor NVTFS4C02NWFTAG	Automotive	3.2 W 107 W	4.5 V 10 V	20 V	8-PowerWDFN	2.25 mOhm	N-Channel	28.3 A 162 A	AEC-Q101	45 nC	MOSFET (Metal Oxide)	2.2 V	Surface Mount	30 V	2980 pF	-55 °C	175 ░C	8-WDFN (3.3x3.3)

Catalog

MOSFET - Single N-Channel Power, N-Channel, µ8FL, 30V, 162 A, 2.25 mΩ

Key Features

• Low RDS (on)Resistance

• Low Capacitance

• Optimized Gate Charge

• AEC-Q101 Qualified and PPAP capable

• NVTFS4C02NWF − Wettable Flanks Product

• RoHS Compliant

Description

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.