SI3407 Series

Catalog

MOSFET P-CH 20V 7.5A/8A 6TSOP

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI3407DV-T1-BE3	1.5 V	-55 °C	150 °C	1670 pF	P-Channel	12 V	2.5 V 4.5 V	24 mOhm	SOT-23-6 Thin TSOT-23-6	6-TSOP	2 W 4.2 W	7.5 A 8 A	MOSFET (Metal Oxide)	63 nC	Surface Mount	20 V
Vishay General Semiconductor - Diodes Division SI3407DV-T1-E3	1.5 V	-55 °C	150 °C	1670 pF	P-Channel	12 V	2.5 V 4.5 V	24 mOhm	SOT-23-6 Thin TSOT-23-6	6-TSOP	2 W 4.2 W	8 A	MOSFET (Metal Oxide)	63 nC	Surface Mount	20 V
Vishay General Semiconductor - Diodes Division SI3407DV-T1-GE3	1.5 V	-55 °C	150 °C	1670 pF	P-Channel	12 V	2.5 V 4.5 V	24 mOhm	SOT-23-6 Thin TSOT-23-6	6-TSOP	4.2 W	8 A	MOSFET (Metal Oxide)	63 nC	Surface Mount	20 V