NST1601CL Series

Bipolar Transistor -160V, -1.5A PNP Low VCE(sat) PNP Single

Catalog

Bipolar Transistor -160V, -1.5A PNP Low VCE(sat) PNP Single

Part	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Transistor Type	Package / Case	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor NST1601CLTWG	87 MHz	140	100 nA	175 °C	PNP	8-LFPAK56 SOT-1205	800 mW	160 V	8-LFPAK	1.5 A	Surface Mount	200 mV

Catalog

Bipolar Transistor -160V, -1.5A PNP Low VCE(sat) PNP Single

Key Features

• Large current capacity

• Low collector to emitter saturation voltage

• High speed switching

• High allowable power dissipation

Description

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications, AEC-Q101 qualified, PAP capable.