NVMFS003P03P8Z Series

Power MOSFET - Power, Single P-Channel, SO8-FL -30 V, 1.8 mΩ, -234 A

Catalog

Power MOSFET - Power, Single P-Channel, SO8-FL -30 V, 1.8 mΩ, -234 A

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Supplier Device Package
ON Semiconductor NVMFWS003P03P8ZT1G	3.9 W 168.7 W	12120 pF	-55 °C	175 ░C	25 V	35.7 A 234 A	4.5 V 10 V	4.9x5.9 5-DFNW 8-SOFL-WF	1.8 mOhm	P-Channel	MOSFET (Metal Oxide)	Surface Mount Wettable Flank	167 nC	8-PowerTDFN 5 Leads	3 V	30 V
ON Semiconductor NVMFS003P03P8ZT1G	3.9 W 168.7 W	12120 pF	-55 °C	175 ░C	25 V	35.7 A 234 A	4.5 V 10 V		1.8 mOhm	P-Channel	MOSFET (Metal Oxide)	Surface Mount	167 nC	8-PowerTDFN 5 Leads	3 V	30 V	5-DFN (5x6)	8-SOFL

Catalog

Power MOSFET - Power, Single P-Channel, SO8-FL -30 V, 1.8 mΩ, -234 A

Key Features

• Small Footprint (5x6 mm)

• Low RDS(on)

• Low QGand Capacitance

• NVMFWS003P03P8ZT1G− Wettable Flank Option

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb-Free and are RoHS Compliant

Description

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.