FCH077N65F_F085 Series

N-Channel SuperFET II™ FRFET MOSFET 650V, 54A, 68mΩ

Catalog

N-Channel SuperFET II™ FRFET MOSFET 650V, 54A, 68mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Qualification	Supplier Device Package	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Grade	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Rds On (Max) @ Id, Vgs
ON Semiconductor FCH077N65F-F085	164 nC	Through Hole	AEC-Q101	TO-247	481 W	650 V	20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	5 V	Automotive	7162 pF	10 V	54 A	TO-247-3	N-Channel	77 mOhm

Catalog

N-Channel SuperFET II™ FRFET MOSFET 650V, 54A, 68mΩ

Key Features

• Typical RDS(on)= 68 mΩ at VGS= 10 V, ID= 27 A

• Typical Qg(tot)= 126 nC at VGS= 10V, ID= 27 A

• UIS Capability

• Qualified to AEC Q101

• RoHS Compliant

Description

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistanceand lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive.SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.