Catalog
NPN Darlington Transistor
Description
AI
This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06.
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NPN Darlington Transistor
NPN Darlington Transistor
| Part | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Supplier Device Package | Package / Case | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 1.5 A | 1 W | 1000 | SOT-223-4 | TO-261-4 TO-261AA | 100 V | 200 nA | Surface Mount | -55 °C | 150 °C | 200 MHz | 1.5 V |