FDPC8014AS Series

25V Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET

Catalog

25V Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET

Part	Technology	Configuration	Power - Max	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case	Supplier Device Package
ON Semiconductor FDPC8014AS	MOSFET (Metal Oxide)	2 N-Channel (Dual) Asymmetrical	2.1 W 2.3 W	35 nC	20 A 40 A	25 V	3.8 mOhm	2.5 V	-55 °C	150 °C	2375 pF	Surface Mount	8-PowerWDFN	Power Clip 56
ON Semiconductor FDPC8014AS	MOSFET (Metal Oxide)	2 N-Channel (Dual) Asymmetrical	2.1 W 2.3 W	35 nC	20 A 40 A	25 V	3.8 mOhm	2.5 V	-55 °C	150 °C	2375 pF	Surface Mount	8-PowerWDFN	Power Clip 56

Catalog

25V Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET

Key Features

• Q1 N-ChannelMax. RDS(on)= 3.8 mΩ at VGS= 10 V, ID= 20 AMax. RDS(on)= 4.7 mΩ at VGS= 4.5 V, ID= 18 A

• Q2 N-ChannelMax. RDS(on)= 1.0 mΩ at VGS= 10 V, ID= 40 AMax. RDS(on)= 1.2 mΩ at VGS= 4.5 V, ID= 37 A

• Low Inductance Packaging Shortens Rise/fall Times, Resulting in Lower Switching Losses

• MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing

• RoHS Compliant

Description

This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM(Q2) have been designed to provide optimal power efficiency.