NVMYS4D1N06CL Series

Power MOSFET, 60 V, 4.0 mOhms, 100 A, Single N-Channel

Catalog

Power MOSFET, 60 V, 4.0 mOhms, 100 A, Single N-Channel

Part	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Package / Case	Grade	Rds On (Max) @ Id, Vgs [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
ON Semiconductor NVMYS4D6N04CLTWG	AEC-Q101	4.5 V 10 V	40 V	Surface Mount	N-Channel	21 A 78 A	-55 °C	175 ░C	3.6 W 50 W	5	LFPAK4	6	1300 pF	20 V	SOT-1023 4-LFPAK	Automotive	4.5 mOhm	MOSFET (Metal Oxide)	23 nC	2 V
ON Semiconductor NVMYS4D1N06CLTWG	AEC-Q101	4.5 V 10 V	60 V	Surface Mount	N-Channel	22 A 100 A	-55 °C	175 ░C	3.7 W 79 W	5	LFPAK4	6	2200 pF	20 V	SOT-1023 4-LFPAK	Automotive		MOSFET (Metal Oxide)	34 nC	2 V	4 mOhm

Catalog

Power MOSFET, 60 V, 4.0 mOhms, 100 A, Single N-Channel

Key Features

• Small Footprint (5x6mm)

• Low RDS (ON)

• Low QGand Capacitance

• LFPAK4 Package, Industry Standard

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Description

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.