TPH2R903PL Series
Manufacturer: Toshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 30 V, 0.0029 Ω@10V, SOP ADVANCE, U-MOSⅨ-H
| Part | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Technology | Power Dissipation (Max) | Vgs (Max) | Supplier Device Package [x] | Supplier Device Package | Supplier Device Package [y] | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Package / Case | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 2300 pF | 4.5 V 10 V | N-Channel | MOSFET (Metal Oxide) | 81 W 960 mW | 20 V | 5 | 8-SOP Advance | 5 | 175 °C | 26 nC | 30 V | 8-PowerVDFN | 2.9 mOhm | 2.1 V | 70 A | Surface Mount |