FDC653N Series

N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 35mΩ

Catalog

N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 35mΩ

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDC653N	30 V	20 V	17 nC	35 mOhm	SuperSOT™-6	Surface Mount	MOSFET (Metal Oxide)	SOT-23-6 Thin TSOT-23-6	4.5 V 10 V	2 V	N-Channel	-55 °C	150 °C	350 pF	5 A
ON Semiconductor FDC653N	30 V	20 V	17 nC	35 mOhm	SuperSOT™-6	Surface Mount	MOSFET (Metal Oxide)	SOT-23-6 Thin TSOT-23-6	4.5 V 10 V	2 V	N-Channel	-55 °C	150 °C	350 pF	5 A

Catalog

N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 35mΩ

Key Features

• 5 A, 30 V

• RDS(ON)= 0.035 Ω @ VGS= 10 V

• RDS(ON)= 0.055 Ω @ VGS= 4.5 V

• Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities

• High density cell design for extremely low RDS(ON)

• Exceptional on-resistance and maximum DC current capability

Description

This N-Channel enhancement mode power field effect transistors is produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.