High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.17 Ω@10V, DFN 8 x 8, DTMOSⅥ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.17 Ω@10V, DFN 8 x 8, DTMOSⅥ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.17 Ω@10V, DFN 8 x 8, DTMOSⅥ
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Supplier Device Package | Vgs(th) (Max) @ Id | Vgs (Max) | Technology | Operating Temperature | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 29 nC | 150 W | 650 V | 18 A | 1635 pF | 170 mOhm | 4-VSFN Exposed Pad | 10 V | Surface Mount | 4-DFN-EP (8x8) | 4 V | 30 V | MOSFET (Metal Oxide) | 150 °C | N-Channel |