SI4910 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET 2N-CH 40V 7.6A 8SOIC
| Part | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Configuration | Technology | Power - Max [Max] | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 855 pF | 7.6 A | -55 °C | 150 °C | Surface Mount | 32 nC | 40 V | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 3.1 W | 2 V | 8-SOIC | 3.9 mm | 0.154 in | 27 mOhm | 8-SOIC |