IR21834 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HALF-BRIDGE 14DIP

Part	Gate Type	Operating Temperature [Min]	Operating Temperature [Max]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	High Side Voltage - Max (Bootstrap) [Max]	Channel Type	Logic Voltage - VIL, VIH	Mounting Type	Number of Drivers	Voltage - Supply [Max]	Voltage - Supply [Min]	Input Type	Driven Configuration	Package / Case	Package / Case	Package / Case	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case
INFINEON IR21834PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	20 ns	40 ns	14-DIP	600 V	Independent	0.8 V 2.7 V	Through Hole	2	20 V	10 VDC	Inverting Non-Inverting	Half-Bridge	14-DIP	0.3 in	7.62 mm	1.9 A	2.3 A
INFINEON IR21834	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	20 ns	40 ns	14-DIP	600 V	Independent	0.8 V 2.7 V	Through Hole	2	20 V	10 VDC	Inverting Non-Inverting	Half-Bridge	14-DIP	0.3 in	7.62 mm	1.9 A	2.3 A
INFINEON IR21834STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	20 ns	40 ns		600 V	Independent	0.8 V 2.7 V	Surface Mount	2	20 V	10 VDC	Inverting Non-Inverting	Half-Bridge	14-SOIC			1.9 A	2.3 A	0.154 in 3.9 mm
INFINEON IR21834PBF
INFINEON IR21834SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	20 ns	40 ns		600 V	Independent	0.8 V 2.7 V	Surface Mount	2	20 V	10 VDC	Inverting Non-Inverting	Half-Bridge	14-SOIC			1.9 A	2.3 A	0.154 in 3.9 mm
INFINEON IR21834STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	20 ns	40 ns		600 V	Independent	0.8 V 2.7 V	Surface Mount	2	20 V	10 VDC	Inverting Non-Inverting	Half-Bridge	14-SOIC			1.9 A	2.3 A	0.154 in 3.9 mm