FDM2509 Series

Catalog

MOSFET 2N-CH 20V 8.7A MICRO2X2

Part	Mounting Type	Package / Case	FET Feature	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Technology	Power - Max [Max]
ON Semiconductor FDM2509NZ	Surface Mount	6-UDFN Exposed Pad	Logic Level Gate	20 V	1200 pF	-55 °C	150 °C	8.7 A	1.5 V	MicroFET 2x2 Thin	2 N-Channel (Dual)	17 nC	18 mOhm	MOSFET (Metal Oxide)	800 mW
ON Semiconductor FDM2509NZ	Surface Mount	6-UDFN Exposed Pad	Logic Level Gate	20 V	1200 pF	-55 °C	150 °C	8.7 A	1.5 V	MicroFET 2x2 Thin	2 N-Channel (Dual)	17 nC	18 mOhm	MOSFET (Metal Oxide)	800 mW