IHD660 Series
Manufacturer: POWER INTEGRATIONS
IC GATE DRVR HALF-BRIDGE MODULE
| Part | Gate Type | Mounting Type | Channel Type | Rise / Fall Time (Typ) | Driven Configuration | Input Type | Number of Drivers | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Supplier Device Package | Voltage - Supply [Max] | Voltage - Supply [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
POWER INTEGRATIONS | IGBT MOSFET (N-Channel) N-Channel MOSFET | Through Hole | Independent | 80 ns 100 ns | Half-Bridge | Non-Inverting | 2 | 85 C | -40 ¯C | 36-DIP Module 24 Leads | Module | 16 V | 14 V |
POWER INTEGRATIONS | IGBT MOSFET (N-Channel) N-Channel MOSFET | Through Hole | Independent | 80 ns 100 ns | Half-Bridge | Inverting | 2 | 85 C | -40 ¯C | 36-DIP Module 24 Leads | Module | 16 V | 14 V |
POWER INTEGRATIONS | IGBT MOSFET (N-Channel) N-Channel MOSFET | Through Hole | Independent | 80 ns 100 ns | Half-Bridge | 2 | 85 C | -40 ¯C | 36-DIP Module 24 Leads | Module | 16 V | 14 V | |
POWER INTEGRATIONS | IGBT MOSFET (N-Channel) N-Channel MOSFET | Through Hole | Independent | 80 ns 100 ns | Half-Bridge | Inverting | 2 | 85 C | -40 ¯C | 36-DIP Module 24 Leads | Module | 16 V | 14 V |
POWER INTEGRATIONS | IGBT MOSFET (N-Channel) N-Channel MOSFET | Through Hole | Independent | 80 ns 100 ns | Half-Bridge | Inverting | 2 | 85 C | -40 ¯C | 36-DIP Module 24 Leads | Module | 16 V | 14 V |