High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.04 Ω@10V, TO-247, DTMOSⅥ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.04 Ω@10V, TO-247, DTMOSⅥ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.04 Ω@10V, TO-247, DTMOSⅥ
| Part | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Technology | Vgs (Max) | Package / Case | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Mounting Type | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Operating Temperature | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 40 mOhm | 105 nC | MOSFET (Metal Oxide) | 30 V | TO-247-3 | 57 A | 4 V | 6250 pF | N-Channel | Through Hole | 360 W | 10 V | 650 V | 150 °C | TO-247 |