FDA18N50 Series

Power MOSFET, N-Channel, UniFETTM, 500 V, 19 A, 265 mΩ, TO-3P

Catalog

Power MOSFET, N-Channel, UniFETTM, 500 V, 19 A, 265 mΩ, TO-3P

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Technology	Mounting Type	Vgs (Max)
ON Semiconductor FDA18N50	2860 pF	5 V	19 A	500 V	SC-65-3 TO-3P-3	N-Channel	10 V	239 W	265 mOhm	-55 °C	150 °C	60 nC	TO-3PN	MOSFET (Metal Oxide)	Through Hole	30 V
ON Semiconductor FDA18N50	2860 pF	5 V	19 A	500 V	SC-65-3 TO-3P-3	N-Channel	10 V	239 W	265 mOhm	-55 °C	150 °C	60 nC	TO-3PN	MOSFET (Metal Oxide)	Through Hole	30 V

Catalog

Power MOSFET, N-Channel, UniFETTM, 500 V, 19 A, 265 mΩ, TO-3P

Key Features

• RDS(on)= 265mΩ ( Max.)@ VGS= 10V, ID= 9.5A

• Low gate charge ( Typ. 45nC)

• Low Crss( Typ. 25pF)

• 100% avalanche tested

Description

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.