SI7842 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET 2N-CH 30V 6.3A PPAK SO8
| Part | Technology | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Configuration | Power - Max [Max] | FET Feature | Mounting Type | Current - Continuous Drain (Id) @ 25¯C | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 20 nC | 30 V | 2 N-Channel (Dual) | 1.4 W | Logic Level Gate | Surface Mount | 6.3 A | PowerPAKÛ SO-8 Dual | 22 mOhm | -55 °C | 150 °C | 2.4 V |