SSM3K302 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET N-CH 30V 3A TSM
| Part | Drain to Source Voltage (Vdss) | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | FET Type | Vgs (Max) | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 30 V | 150 °C | 4.3 nC | 700 mW | 71 mOhm | 1.8 V 4 V | TSM | N-Channel | 12 V | MOSFET (Metal Oxide) | 270 pF | Surface Mount | 3 A | SC-59 SOT-23-3 TO-236-3 |