FDG6306P Series

P-Channel 2.5V Specified PowerTrench® MOSFET -20 V, -0.6 A, 420 mΩ

Catalog

P-Channel 2.5V Specified PowerTrench® MOSFET -20 V, -0.6 A, 420 mΩ

Part	Supplier Device Package	Mounting Type	Technology	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDG6306P	SC-88 (SC-70-6)	Surface Mount	MOSFET (Metal Oxide)	6-TSSOP SC-88 SOT-363	20 V	-55 °C	150 °C	600 mA	300 mW	1.5 V	420 mOhm	Logic Level Gate	114 pF	2 P-Channel	2 nC

Catalog

P-Channel 2.5V Specified PowerTrench® MOSFET -20 V, -0.6 A, 420 mΩ

Key Features

• –0.6 A, –20 V.

• RDS(ON)= 420 mΩ @ VGS = –4.5 V

• RDS(ON)= 630 mΩ @ VGS = –2.5 V

• Low gate charge

• High performance trench technology for extremelylow RDS(ON)

• Compact industry standard SC70-6 surface mountpackage

Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).