IRF58 Series

Manufacturer: INFINEON

Catalog

MOSFET 2P-CH 20V 2.2A 6TSOP

Part	Configuration	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Power - Max [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Feature	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON IRF5850TRPBF	2 P-Channel (Dual)	135 mOhm	6-TSOP	1.2 V	960 mW	Surface Mount	2.2 A	Logic Level Gate	SOT-23-6 Thin TSOT-23-6	20 V	150 °C	-55 °C	320 pF	5.4 nC	MOSFET (Metal Oxide)
INFINEON IRF5852	2 N-Channel (Dual)	90 mOhm	6-TSOP	1.25 V	960 mW	Surface Mount	2.7 A	Logic Level Gate	SOT-23-6 Thin TSOT-23-6	20 V				6 nC	MOSFET (Metal Oxide)	400 pF
INFINEON IRF5852TR	2 N-Channel (Dual)	90 mOhm	6-TSOP	1.25 V	960 mW	Surface Mount	2.7 A	Logic Level Gate	SOT-23-6 Thin TSOT-23-6	20 V	150 °C	-55 °C		6 nC	MOSFET (Metal Oxide)	400 pF
INFINEON IRF5852TRPBF	2 N-Channel (Dual)	90 mOhm	6-TSOP	1.25 V	960 mW	Surface Mount	2.7 A	Logic Level Gate	SOT-23-6 Thin TSOT-23-6	20 V	150 °C	-55 °C		6 nC	MOSFET (Metal Oxide)	400 pF
INFINEON IRF5851TRPBF	N and P-Channel	90 mOhm	6-TSOP	1.25 V	960 mW	Surface Mount	2.2 A 2.7 A	Logic Level Gate	SOT-23-6 Thin TSOT-23-6	20 V	150 °C	-55 °C		6 nC	MOSFET (Metal Oxide)	400 pF
INFINEON IRF5851	N and P-Channel	90 mOhm	6-TSOP	1.25 V	960 mW	Surface Mount	2.2 A 2.7 A	Logic Level Gate	SOT-23-6 Thin TSOT-23-6	20 V				6 nC	MOSFET (Metal Oxide)	400 pF
INFINEON IRF5851TR	N and P-Channel	90 mOhm	6-TSOP	1.25 V	960 mW	Surface Mount	2.2 A 2.7 A	Logic Level Gate	SOT-23-6 Thin TSOT-23-6	20 V	150 °C	-55 °C		6 nC	MOSFET (Metal Oxide)	400 pF
INFINEON IRF5810TRPBF	2 P-Channel (Dual)	90 mOhm	6-TSOP	1.2 V	960 mW	Surface Mount	2.9 A	Logic Level Gate	SOT-23-6 Thin TSOT-23-6	20 V	150 °C	-55 °C		9.6 nC	MOSFET (Metal Oxide)	650 pF
INFINEON IRF5850TR	2 P-Channel (Dual)	135 mOhm	6-TSOP	1.2 V	960 mW	Surface Mount	2.2 A	Logic Level Gate	SOT-23-6 Thin TSOT-23-6	20 V	150 °C	-55 °C	320 pF	5.4 nC	MOSFET (Metal Oxide)