PMGD780SN Series

Dual N-channel TrenchMOS standard level FET

Catalog

Dual N-channel TrenchMOS standard level FET

Part	Drain to Source Voltage (Vdss)	Package / Case	Configuration	FET Feature	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Mounting Type	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Freescale Semiconductor - NXP PMGD780SN,115	60 V	6-TSSOP SC-88 SOT-363	2 N-Channel (Dual)	Logic Level Gate	2.5 V	23 pF	490 mA	MOSFET (Metal Oxide)	920 mOhm	1.05 nC	6-TSSOP	Surface Mount	410 mW	-55 °C	150 °C

Dual N-channel TrenchMOS standard level FET