PJF4NA65 Series
Manufacturer: Panjit International Inc.
Beta
⌘K
650V N-CHANNEL MOSFET
| Part | Technology | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Vgs(th) (Max) @ Id | FET Type | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Panjit International Inc. | MOSFET (Metal Oxide) | 16.1 nC | TO-220-3 Full Pack | Through Hole | 423 pF | 3.75 Ohm | 650 V | 30 V | 4 V | N-Channel | ITO-220AB | 3 A | 23 W | 150 °C | -55 °C | 10 V |