NTP75N03L09 Series

Power MOSFET 75 Amps, 30 Volts N-Channel TO-220 and D2PAK

Catalog

Power MOSFET 75 Amps, 30 Volts N-Channel TO-220 and D2PAK

Part	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor NTP75N03RG	MOSFET (Metal Oxide)	20 V	9.7 A	TO-220	Through Hole	13.2 nC	2 V	1333 pF	1.25 W 74.4 W	N-Channel	25 V	-55 °C	150 °C	TO-220-3	8 mOhm	4.5 V 10 V
ON Semiconductor NTP75N06G	MOSFET (Metal Oxide)	20 V	75 A	TO-220	Through Hole		4 V	4510 pF	2.4 W 214 W	N-Channel	60 V	-55 °C	175 ░C	TO-220-3	9.5 mOhm	10 V	130 nC
ON Semiconductor NTP75N06L	MOSFET (Metal Oxide)	20 V	75 A	TO-220	Through Hole		2 V		2.4 W 214 W	N-Channel	60 V	-55 °C	175 ░C	TO-220-3	11 mOhm	5 V	92 nC	4370 pF
ON Semiconductor NTP75N03L09	MOSFET (Metal Oxide)	20 V	75 A	TO-220	Through Hole	75 nC	2 V		2.5 W 125 W	N-Channel	30 V	-55 °C	150 °C	TO-220-3	8 mOhm	5 V		5635 pF
ON Semiconductor NTP75N03L09G	MOSFET (Metal Oxide)	20 V	75 A	TO-220	Through Hole	75 nC	2 V		2.5 W 125 W	N-Channel	30 V	-55 °C	150 °C	TO-220-3	8 mOhm	5 V		5635 pF

Catalog

Power MOSFET 75 Amps, 30 Volts N-Channel TO-220 and D2PAK

Key Features

• Ultra-Low RDS(on), Single Base, Advanced Technology

• SPICE Parameters Available

• Diode is Characterized for Use in Bridge Circuits

• IDSSand VDS(on)Specified at Elevated Temperatures

• High Avalanche Energy Specified

• ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0

• Pb-Free Packages are Available

Description

This Logic Level Vertical Power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery.