IPI100N Series

Manufacturer: INFINEON

Catalog

MOSFET N-CH 40V 100A TO262-3

Part	Power Dissipation (Max)	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Technology	Grade	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Qualification	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IPI100N04S4H2AKSA1	115 W	I2PAK TO-262-3 Long Leads TO-262AA	175 °C	-55 °C	Through Hole	MOSFET (Metal Oxide)	Automotive	40 V	20 V	PG-TO262-3	N-Channel	7180 pF	AEC-Q101	4 V	90 nC	10 V	2.7 mOhm	100 A
INFINEON IPI100N12S305AKSA1	300 W	I2PAK TO-262-3 Long Leads TO-262AA	175 °C	-55 °C	Through Hole	MOSFET (Metal Oxide)	Automotive	120 V	20 V		N-Channel	11570 pF	AEC-Q101	4 V		10 V	5.1 mOhm	100 A	185 nC
INFINEON IPI100N06S3L04XK		I2PAK TO-262-3 Long Leads TO-262AA	175 °C	-55 °C	Through Hole	MOSFET (Metal Oxide)	Automotive	55 V	16 V	PG-TO262-3	N-Channel	17270 pF	AEC-Q101	2.2 V		5 V 10 V	3.8 mOhm	100 A	362 nC	214 W
INFINEON IPI100N10S305AKSA1	300 W	I2PAK TO-262-3 Long Leads TO-262AA	175 °C	-55 °C	Through Hole	MOSFET (Metal Oxide)	Automotive	100 V	20 V	PG-TO262-3	N-Channel	11570 pF	AEC-Q101	4 V		10 V	5.1 mOhm	100 A	176 nC
INFINEON IPI100N08N3GHKSA1	100 W	I2PAK TO-262-3 Long Leads TO-262AA	175 °C	-55 °C	Through Hole	MOSFET (Metal Oxide)		80 V	20 V	PG-TO262-3	N-Channel					6 V 10 V	10 mOhm	70 A	35 nC		3.5 V	2410 pF
INFINEON IPI100N06S3L-03	300 W	I2PAK TO-262-3 Long Leads TO-262AA	175 °C	-55 °C	Through Hole	MOSFET (Metal Oxide)	Automotive	55 V	16 V	PG-TO262-3	N-Channel		AEC-Q101	2.2 V	550 nC	5 V 10 V	3 mOhm	100 A				26240 pF