RT1C060 Series

Catalog

MOSFET N-CH 20V 6A 8TSST

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)
Rohm Semiconductor RT1C060UNTR	11 nC	870 pF	150 °C	10 V	MOSFET (Metal Oxide)	20 V	N-Channel	1 V	Surface Mount	28 mOhm	6 A	650 mW	8-TSST	1.5 V 4.5 V