NSVBC858 Series

100 mA, 30V PNP Bipolar Junction Transistor

Catalog

100 mA, 30V PNP Bipolar Junction Transistor

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Frequency - Transition	Transistor Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Grade	Vce Saturation (Max) @ Ib, Ic	Qualification	Current - Collector (Ic) (Max) [Max]
ON Semiconductor NSVBC858AWT1G	SC-70 SOT-323	-55 °C	150 °C	Surface Mount	30 V	125 hFE	100 MHz	PNP	15 nA	150 mW	Automotive	650 mV	AEC-Q101	100 mA

Catalog

100 mA, 30V PNP Bipolar Junction Transistor

Key Features

• Device Marking:BC856AWT1 = 3ABC856BWT1 = 3BBC857AWT1 = 3EBC857BWT1 = 3FBC858AWT1 = 3JBC858BWT1 = 3KBC858CWT1 = 3L

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Description

This 100 mA, 30V PNP Bipolar Junction Transistor is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package, which is designed for low power surface mount applications.