High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.25 Ω@10V, TO-220SIS, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.25 Ω@10V, TO-220SIS, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.25 Ω@10V, TO-220SIS, DTMOSⅣ
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Mounting Type | FET Type | Package / Case | Power Dissipation (Max) | Vgs (Max) | Rds On (Max) @ Id, Vgs [Max] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 35 nC | 13.7 A | 1300 pF | TO-220SIS | Through Hole | N-Channel | TO-220-3 Full Pack | 40 W | 30 V | 250 mOhm | MOSFET (Metal Oxide) | 10 V | 3.5 V | 650 V | 150 °C |