IR2113 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HALF-BRIDGE 16SOIC

Part	Gate Type	Driven Configuration	Input Type	Logic Voltage - VIL, VIH	Channel Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Mounting Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Number of Drivers	Package / Case	Package / Case	Package / Case	High Side Voltage - Max (Bootstrap) [Max]	Package / Case
INFINEON 98-0247	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	6 V 9.5 V	Independent	20 V	3.3 V	25 ns	17 ns	Surface Mount	2 A	2 A	16-SOIC	-40 °C	150 °C	2	16-SOIC	7.5 mm	0.295 "	600 V
INFINEON IR2113SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	6 V 9.5 V	Independent	20 V	3.3 V	25 ns	17 ns	Surface Mount	2 A	2 A	16-SOIC	-40 °C	150 °C	2	16-SOIC	7.5 mm	0.295 "	600 V
INFINEON IR2113-1PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	6 V 9.5 V	Independent	20 V	3.3 V	25 ns	17 ns	Through Hole	2 A	2 A		-40 °C	150 °C	2	13 Leads 14-DIP		7.62 mm	600 V	0.3 in
INFINEON 98-0119PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	6 V 9.5 V	Independent	20 V	3.3 V	25 ns	17 ns	Through Hole	2 A	2 A	16-PDIP	-40 °C	150 °C	2	16-DIP (0.300" 7.62mm) 14 Leads			600 V
INFINEON IR2113PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	6 V 9.5 V	Independent	20 V	3.3 V	25 ns	17 ns	Through Hole	2 A	2 A	14-DIP	-40 °C	150 °C	2	14-DIP	7.62 mm	0.3 in	600 V
INFINEON IR2113STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	6 V 9.5 V	Independent	20 V	3.3 V	25 ns	17 ns	Surface Mount	2 A	2 A	16-SOIC	-40 °C	150 °C	2	16-SOIC	7.5 mm	0.295 "	600 V
INFINEON IR2113-1	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	6 V 9.5 V	Independent	20 V	3.3 V	25 ns	17 ns	Through Hole	2 A	2 A		-40 °C	150 °C	2	13 Leads 14-DIP		7.62 mm	600 V	0.3 in
INFINEON IR2113	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	6 V 9.5 V	Independent	20 V	3.3 V	25 ns	17 ns	Through Hole	2 A	2 A	14-DIP	-40 °C	150 °C	2	14-DIP	7.62 mm	0.3 in	600 V
INFINEON IR2113-2	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	6 V 9.5 V	Independent	20 V	3.3 V	25 ns	17 ns	Through Hole	2 A	2 A	16-PDIP	-40 °C	150 °C	2	16-DIP (0.300" 7.62mm) 14 Leads			600 V
INFINEON IR2113SPBF