SSM3J112 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET P-CH 30V 1.1A UFM
| Part | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Rds On (Max) @ Id, Vgs | Technology | Vgs(th) (Max) @ Id | Operating Temperature | Vgs (Max) | Mounting Type | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 4 V | 10 V | 390 mOhm | MOSFET (Metal Oxide) | 1.8 V | 150 °C | 20 V | Surface Mount | P-Channel | 30 V | 1.1 A | UFM |