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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Technology | Package / Case | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Grade | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Rds On (Max) @ Id, Vgs | Vgs (Max) | FET Type | Vgs(th) (Max) @ Id | Qualification | Supplier Device Package | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MOSFET (Metal Oxide) | 6-UDFN Exposed Pad | 2 W 19 W | 16 nC | Automotive | 175 °C | -55 °C | Surface Mount | 33 mOhm | 12 V | P-Channel | 1.3 V | AEC-Q101 | DFN2020MD-6 | 20 V | 6 A 18 A | 2.5 V 8 V | 1025 pF |