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60 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Grade | Technology | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Mounting Type | Vgs (Max) [Max] | Qualification | FET Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Automotive | MOSFET (Metal Oxide) | 2.5 V 10 V | SC-59 SOT-23-3 TO-236-3 | Surface Mount | 20 V | AEC-Q101 | N-Channel | 175 °C | 250 mA | 60 V | 0.21 nC | TO-236AB |