NTBG030N120M3S Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 29 mohm, 1200 V, M3S, D2PAK-7L

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 29 mohm, 1200 V, M3S, D2PAK-7L

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max) [Min]	Vgs (Max) [Max]	Package / Case	Technology	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NTBG030N120M3S	4.4 V	2430 pF	107 nC	Surface Mount	18 V	39 mOhm	N-Channel	D2PAK-7	77 A	1200 V	-10 V	22 V	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	SiC (Silicon Carbide Junction Transistor)	348 W	-55 °C	175 ░C

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 29 mohm, 1200 V, M3S, D2PAK-7L

Key Features

• D2PAK-7L package with Kelvin source configuration

• Excellent FOM [ = Rdson * Eoss ]

• Ultra Low Gate Charge (QG(tot) = 107 nC)

• High Speed Switching with Low Capacitance (Coss = 106 pF)

• 15V to 18V Gate Drive

• New M3S technology: 29 mohm RDS(ON) with low Eon and Eoff losses

• 100% Avalanche Tested

• Halide Free and RoHS Compliant

Description

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.