FCPF16N60NT Series

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 16 A, 199 mΩ, TO-220F

Catalog

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 16 A, 199 mΩ, TO-220F

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Package / Case	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FCPF16N60NT	4 V	199 mOhm	35.7 W	TO-220-3 Full Pack	MOSFET (Metal Oxide)	N-Channel	16 A	Through Hole	600 V	TO-220F-3	10 V	30 V	2170 pF	-55 °C	150 °C

Catalog

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 16 A, 199 mΩ, TO-220F

Key Features

• RDS(on)= 170mΩ ( Typ.) @ VGS= 10V, ID= 8A

• Ultra low gate charge ( Typ. Qg= 40.2nC )

• Low effective output capacitance ( Typ. Coss.eff = 176pF )

• 100% avalanche tested

• RoHS compliant

Description

The SupreMOS®MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.