BYG10 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

DIODE SWITCHING 1.6KV 1.5A 2-PIN SMA T/R

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Reverse Recovery Time (trr)	Speed	Speed	Package / Case	Supplier Device Package	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Grade
Vishay General Semiconductor - Diodes Division BYG10Y-M3/TR	150 °C	-55 °C	Avalanche	4 µs	Standard Recovery >500ns	200 mA	DO-214AC SMA	DO-214AC (SMA)	1.5 A	1 µA	Surface Mount	1.15 V
Vishay General Semiconductor - Diodes Division BYG10K-E3/TR3	150 °C	-55 °C	Avalanche	4 µs	Standard Recovery >500ns	200 mA	DO-214AC SMA	DO-214AC (SMA)	1.5 A	1 µA	Surface Mount	1.15 V	800 V
Vishay General Semiconductor - Diodes Division BYG10GHM3_A/I	150 °C	-55 °C	Avalanche	4 µs	Standard Recovery >500ns	200 mA	DO-214AC SMA	DO-214AC (SMA)	1.5 A	1 µA	Surface Mount	1.15 V	400 V	AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division BYG10J-M3/TR	150 °C	-55 °C	Avalanche	4 µs	Standard Recovery >500ns	200 mA	DO-214AC SMA	DO-214AC (SMA)	1.5 A	1 µA	Surface Mount	1.15 V	600 V
Vishay General Semiconductor - Diodes Division BYG10K-M3/TR3	150 °C	-55 °C	Avalanche	4 µs	Standard Recovery >500ns	200 mA	DO-214AC SMA	DO-214AC (SMA)	1.5 A	1 µA	Surface Mount	1.15 V	800 V
Vishay General Semiconductor - Diodes Division BYG10JHE3_A/I	150 °C	-55 °C	Avalanche	4 µs	Standard Recovery >500ns	200 mA	DO-214AC SMA	DO-214AC (SMA)	1.5 A	1 µA	Surface Mount	1.15 V	600 V	AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division BYG10Y-E3/TR	150 °C	-55 °C	Avalanche	4 µs	Standard Recovery >500ns	200 mA	DO-214AC SMA	DO-214AC (SMA)	1.5 A	1 µA	Surface Mount	1.15 V
Vishay General Semiconductor - Diodes Division BYG10DHE3_A/I	150 °C	-55 °C	Avalanche	4 µs	Standard Recovery >500ns	200 mA	DO-214AC SMA	DO-214AC (SMA)	1.5 A	1 µA	Surface Mount	1.15 V	200 V	AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division BYG10J/TR	150 °C	-55 °C	Avalanche	4 µs	Standard Recovery >500ns	200 mA	DO-214AC SMA	DO-214AC (SMA)	1.5 A	1 µA	Surface Mount	1.15 V	600 V
Vishay General Semiconductor - Diodes Division BYG10M-M3/TR3	150 °C	-55 °C	Avalanche	4 µs	Standard Recovery >500ns	200 mA	DO-214AC SMA	DO-214AC (SMA)	1.5 A	1 µA	Surface Mount	1.15 V	1000 V