NTPF150N65S3HF Series

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 24 A, 150 mΩ, TO-220F

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 24 A, 150 mΩ, TO-220F

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Power Dissipation (Max)	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Mounting Type
ON Semiconductor NTPF150N65S3HF	1985 pF	N-Channel	192 W	30 V	TO-220FP	24 A	MOSFET (Metal Oxide)	650 V	150 mOhm	10 V	-55 °C	150 °C	TO-220-3 Full Pack	5 V	43 nC	Through Hole

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 24 A, 150 mΩ, TO-220F

Key Features

• 700 V @ TJ= 150 °C

• Ultra Low Gate Charge (Typ. Qg= 43 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 400 pF)

• Excellent body diode performance (low Qrr, robust body diode)

• Optimized Capacitance

• RoHS Compliant

• 100% Avalanche Tested

• Typ. RDS(on)= 121 mΩ

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.