GD25LQ128 Series
Manufacturer: GigaDevice Semiconductor (HK) Limited
IC FLASH 128MBIT SPI/QUAD 8SOP
| Part | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Size | Memory Type | Access Time | Package / Case | Package / Case | Technology | Memory Format | Memory Organization | Supplier Device Package | Memory Interface | Clock Frequency | Write Cycle Time - Word, Page | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | Surface Mount | -40 °C | 105 °C | 60 µs | 2.4 ms | 1.65 V | 2 V | 16 MB | Non-Volatile | 6 ns | 0.209 in 5.3 mm | 8-SOIC | FLASH - NOR (SLC) | FLASH | 16M x 8 | 8-SOP | SPI - Quad I/O | 120 MHz | |||
GigaDevice Semiconductor (HK) Limited | Surface Mount | -40 °C | 105 °C | 1.65 V | 2 V | 16 MB | Non-Volatile | 6 ns | 0.209 in 5.3 mm | 8-SOIC | FLASH - NOR (SLC) | FLASH | 16M x 8 | 8-SOP | QPI SPI - Quad I/O | 104 MHz | 2.4 ms | ||||
GigaDevice Semiconductor (HK) Limited | Surface Mount | -40 °C | 125 °C | 100 µs | 4 ms | 1.65 V | 2 V | 16 MB | Non-Volatile | 6 ns | 8-XDFN Exposed Pad | FLASH - NOR (SLC) | FLASH | 16M x 8 | 8-USON (4x4) | SPI - Quad I/O | 120 MHz | ||||
GigaDevice Semiconductor (HK) Limited | Surface Mount | -40 °C | 105 °C | 1.65 V | 2 V | 16 MB | Non-Volatile | 6 ns | 8-WDFN Exposed Pad | FLASH - NOR (SLC) | FLASH | 16M x 8 | 8-WSON (6x8) | QPI SPI - Quad I/O | 104 MHz | 2.4 ms | |||||
GigaDevice Semiconductor (HK) Limited | Surface Mount | -40 ¯C | 85 C | 1.65 V | 2 V | 16 MB | Non-Volatile | 0.209 in 5.3 mm | 8-SOIC | FLASH - NOR | FLASH | 16M x 8 | 8-SOP | SPI - Quad I/O | 120 MHz | 2.4 ms | |||||
GigaDevice Semiconductor (HK) Limited | Surface Mount | -40 °C | 105 °C | 1.65 V | 2 V | 16 MB | Non-Volatile | 6 ns | 8-WDFN Exposed Pad | FLASH - NOR (SLC) | FLASH | 16M x 8 | 8-WSON (5x6) | QPI SPI - Quad I/O | 104 MHz | 2.4 ms | |||||
GigaDevice Semiconductor (HK) Limited | Surface Mount | -40 °C | 105 °C | 60 µs | 2.4 ms | 1.65 V | 2 V | 16 MB | Non-Volatile | 6 ns | 16-SOIC | FLASH - NOR (SLC) | FLASH | 16M x 8 | 16-SOP | SPI - Quad I/O | 120 MHz | 7.5 mm | 0.295 " | ||
GigaDevice Semiconductor (HK) Limited | Surface Mount | -40 ¯C | 85 C | 60 µs | 2.4 ms | 1.65 V | 2 V | 16 MB | Non-Volatile | 6 ns | 8-XDFN Exposed Pad | FLASH - NOR (SLC) | FLASH | 16M x 8 | 8-USON (4x4) | SPI - Quad I/O | 120 MHz | ||||
GigaDevice Semiconductor (HK) Limited | Surface Mount | -40 °C | 105 °C | 60 µs | 2.4 ms | 1.65 V | 2 V | 16 MB | Non-Volatile | 6 ns | 8-WDFN Exposed Pad | FLASH - NOR (SLC) | FLASH | 16M x 8 | 8-WSON (5x6) | SPI - Quad I/O | 120 MHz | ||||
GigaDevice Semiconductor (HK) Limited | Surface Mount | -40 °C | 125 °C | 1.65 V | 2 V | 16 MB | Non-Volatile | 6 ns | 24-TBGA | FLASH - NOR (SLC) | FLASH | 16M x 8 | 24-TFBGA (6x8) | QPI SPI - Quad I/O | 104 MHz | 4 ms |