TK10A55 Series

Catalog

MOSFET N-CH 550V 10A TO220SIS

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature
Toshiba Semiconductor and Storage TK10A55D(STA4,Q,M)	45 W	720 mOhm	N-Channel	10 V	30 V	Through Hole	TO-220-3 Full Pack	1200 pF	550 V	10 A	MOSFET (Metal Oxide)	TO-220SIS	24 nC	150 °C