NCP81085 Series

Dual MOSFET Gate Driver

Catalog

Dual MOSFET Gate Driver

Part	Input Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Channel Type	Gate Type	Driven Configuration	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Number of Drivers	Supplier Device Package	High Side Voltage - Max (Bootstrap) [Max]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Logic Voltage - VIL, VIH
ON Semiconductor NCP81085MTTXG	Non-Inverting	-40 °C	140 °C	Surface Mount	Single	N-Channel MOSFET	High-Side and Low-Side	9-WDFN Exposed Pad	20 V	8.5 V	2	9-WDFN (4x5)	200 V	7 ns	8 ns	4 A	4 A	0.8 V 2.7 V

Catalog

Dual MOSFET Gate Driver

Key Features

• WDFN9 (MT) Package

• Floating Top Driver Accommodates Boost Voltage up to 180 V

• Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration

• Switching Frequency up to 1 MHz

• 20 ns Propagation Delay Times

• 4 A Sink, 4 A Source Output Currents

• 8 ns Rise / 7 ns Fall Times with 1000 pF Load

• UVLO Protection

• Specified from −40°C to 140°C

• Pb−Free, Halogen Free/BFR Free and is RoHS Compliant

Description

The NCP81085 is a high performance dual MOSFET gate driver optimized to drive the gates of both high and low side power MOSFETs in a synchronous buck converter. The NCP81085 uses an on−chip bootstrap diode to eliminate the external discrete diode. A high floating top driver design can accommodate HB voltage as high as 180 V. The low−side and high−side are independently controlled and match to 4 ns between the turn−on and turn−off of each other. Independent Under−Voltage lockout is provided for the high side and low side driver forcing the output low when the drive voltage is below a specific threshold.