MJE15031 Series

Bipolar Transistor, PNP, 150 V, 8.0 A

Catalog

Bipolar Transistor, PNP, 150 V, 8.0 A

Part	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Package / Case	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Frequency - Transition
ON Semiconductor MJE15031G	100 µA	TO-220	150 °C	-65 °C	150 V	8 A	TO-220-3	50 W	20	PNP	500 mV	Through Hole	30 MHz

Bipolar Transistor, PNP, 150 V, 8.0 A

• DC Current Gain Specified to 4.0 AmpereshFE= 40 (Min) @ IC= 3.0 AdchFE= 20 (Min) @ IC= 4.0 Adc

• Collector-Emitter Sustaining Voltage -VCEO(sus)= 120 Vdc (Min) MJE15028, MJE15029VCEO(sus)= 150 Vdc (Min) - MJE15030, MJE15031

• High Current Gain - Bandwidth ProductfT= 30 MHz (Min) @ IC= 500 mAdc

• TO-220AB Compact Package

• Pb-Free Packages are Available

The Bipolar Power Transistor is designed for use as a high-frequency driver in audio amplifiers.