TW070J120 Series

Catalog

SICFET N-CH 1200V 36A TO3P

Part	Power Dissipation (Max)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type
Toshiba Semiconductor and Storage TW070J120B,S1Q	272 W	Through Hole	175 °C	-55 C	90 mOhm	-10 V 25 V	1.2 kV	36 A	SC-65-3 TO-3P-3	1680 pF	5.8 V	67 nC	TO-3P(N)	N-Channel