SI4110 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 80V 17.3A 8SO
| Part | Mounting Type | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Technology | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | Surface Mount | 13 mOhm | 3.6 W 7.8 W | 2205 pF | MOSFET (Metal Oxide) | 53 nC | 80 V | 4 V | 8-SOIC | 3.9 mm | 0.154 in | N-Channel | -55 °C | 150 °C | 8-SOIC | 20 V | 10 V |